What those graphs illustrate is SLC caching: writing faster by storing one bit per NAND flash memory cell (imprecisely), then eventually re-packing that data to store three or four memory bits per cell (as is necessary to achieve the drive's nominal capacity). Note that this only directly affects write operations; reading data at several GB/s is possible even for data that's stored in TLC/QLC cells, and can be sustained for the entire capacity of the drive.